Method of manufacturing a semiconductor device with lateral FET cells and field plates

ABSTRACT

A method of manufacturing a semiconductor device includes providing dielectric stripe structures extending from a first surface into a semiconductor substrate between semiconductor fins. A first mask is provided that covers a first area including first stripe sections of the dielectric stripe structures and first fin sections of the semiconductor fins. The first mask exposes a second area including second stripe and second fin sections. A channel/body zone is formed in the second fin sections by introducing impurities, wherein the first mask is used as an implant mask. Using an etch mask that is based on the first mask, recess grooves are formed at least in the second stripe sections.

BACKGROUND

Power semiconductor devices like Power MOSFETs (metal oxidesemiconductor field effect transistors) sustain a high breakdown voltagein a blocking mode and have a low on-state resistance in a conductivemode. In lateral Power MOSFETs a load current flows in a lateraldirection parallel to a main surface of a semiconductor die. The lateralapproach imposes area restrictions for channel width, gate electrode,drift zone and contacts resulting in a comparatively high on-stateresistance R_(DSon). Lateral power FinFETs (Fin field effecttransistors) aim at decreasing the on-state resistance by expanding thechannel width in the vertical direction. It is desirable to providelateral power semiconductor devices with improved electriccharacteristics.

SUMMARY

According to an embodiment a method of manufacturing a semiconductordevice includes providing dielectric stripe structures extending from afirst surface into a semiconductor substrate between semiconductor fins.A first mask is provided that covers a first area including first stripesections of the dielectric stripe structures and first fin sections ofthe semiconductor fins. The first mask exposes a second area includingsecond stripe and second fin sections. A channel/body zone is formed inthe second fin sections by introducing impurities, wherein the firstmask is used as an implant mask. Using an etch mask that is based on thefirst mask, recess grooves are formed at least in the second stripesections.

In accordance with a further embodiment a semiconductor device includesburied field plate stripes in a first area of a semiconductor portion,wherein longitudinal axes of the field plate stripes run parallel to afirst lateral direction parallel to a first surface of the semiconductorportion. Buried cell stripes include first cell insulators in the firstarea and buried gate electrodes in a second area adjoining the firstarea in the first lateral direction. Gate dielectrics dielectricallyinsulate the buried gate electrodes from semiconductor fins formedbetween neighboring cell stripes. The gate dielectrics are thinner thanthe first cell insulators.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description and onviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification. The drawings illustrate the embodiments ofthe present invention and together with the description serve to explainprinciples of the invention. Other embodiments of the invention andintended advantages will be readily appreciated as they become betterunderstood by reference to the following detailed description.

FIG. 1A is a schematic plan view of a portion of a semiconductorsubstrate for illustrating a method of manufacturing a semiconductordevice after forming channel/body zones using a first mask.

FIG. 1B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 1A along line B-B.

FIG. 1C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 1A along line C-C.

FIG. 2A is a schematic plan view of the semiconductor substrate portionof FIG. 1A for illustrating a method of manufacturing a semiconductordevice in accordance with an embodiment providing a trimming of thefirst mask.

FIG. 2B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 2A along line B-B.

FIG. 2C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 2A along line C-C.

FIG. 3A is a schematic lateral cross-sectional view of a portion of asemiconductor device in accordance with an embodiment providing alateral FinFET with a field plate and a self-aligned drain extension.

FIG. 3B is a schematic combined cross-sectional view of thesemiconductor device portion of FIG. 3A along lines A-B and B-Cprojected in the same plane.

FIG. 4A is a schematic plan view of a portion of a semiconductorsubstrate for illustrating a method of manufacturing a semiconductordevice in accordance with an embodiment providing cell insulators bythermal oxide growth, after providing a conformal dielectric layer.

FIG. 4B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 4A along line B-B.

FIG. 4C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 4A along line C-C.

FIG. 4D is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 4A along line D-D.

FIG. 5A is a schematic plan view of the semiconductor substrate portionof FIG. 4A after introducing impurities through openings of a firstmask.

FIG. 5B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 5A along line B-B.

FIG. 5C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 5A along line C-C.

FIG. 5D is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 5A along line D-D.

FIG. 6A is a schematic plan view of the semiconductor substrate portionof FIG. 5A after forming recess grooves in dielectric stripe structuresusing the trimmed first mask as an etch mask.

FIG. 6B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 6A along line B-B.

FIG. 6C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 6A along line C-C.

FIG. 6D is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 6A along line D-D.

FIG. 7A is a schematic plan view of the semiconductor substrate portionof FIG. 6A after providing source zones.

FIG. 7B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 7A along line B-B.

FIG. 7C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 7A along line C-C.

FIG. 7D is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 7A along line D-D.

FIG. 8A is a schematic plan view of the semiconductor substrate portionof FIG. 7A after forming gate dielectrics.

FIG. 8B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 8A along line B-B.

FIG. 8C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 8A along line C-C.

FIG. 8D is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 8A along line D-D.

FIG. 9A is a schematic plan view of the semiconductor substrate portionof FIG. 8A after forming gate and field plate connection stripes.

FIG. 9B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 9A along line B-B.

FIG. 9C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 9A along line C-C.

FIG. 9D is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 9A along line D-D.

FIG. 10A is a schematic plan view of the semiconductor substrate portionof FIG. 9A after forming dielectric spacers along the gate and fieldplate connection stripes.

FIG. 10B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 10A along line B-B.

FIG. 10C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 10A along line C-C.

FIG. 11A is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 10B after introducing contact trenches.

FIG. 11B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 10C after introducing contact trenches.

FIG. 12A is a schematic plan view of a portion of a semiconductorsubstrate for illustrating a method of manufacturing a semiconductordevice with self-aligned source and drain zones by using a combined maskfor defining both body/channel zones and contact stripes, afterproviding a first mask.

FIG. 12B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 12A along line B-B.

FIG. 12C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 12A along line C-C.

FIG. 12D is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 12A along line D-D.

FIG. 13A is a schematic plan view of the semiconductor substrate portionof FIG. 12A after introducing recess grooves for gate electrodes.

FIG. 13B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 13A along line B-B.

FIG. 13C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 13A along line C-C.

FIG. 13D is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 13A along line D-D.

FIG. 14A is a schematic plan view of the semiconductor substrate portionof FIG. 13A after providing gate and field plate connection stripes.

FIG. 14B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 14A along line B-B.

FIG. 14C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 14A along line C-C.

FIG. 14D is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 14A along line D-D.

FIG. 15A is a schematic plan view of the semiconductor substrate portionof FIG. 14A after introducing contact trenches.

FIG. 15B is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 15A along line B-B.

FIG. 15C is a schematic cross-sectional view of the semiconductorsubstrate portion of FIG. 15A along line C-C.

FIG. 16A illustrates a schematic plan view and a combinedcross-sectional view along lines A-B and B-C of a semiconductorsubstrate portion for illustrating a method of manufacturing asemiconductor device with source and drain zones self-aligned tobody/channel zones using a combined mask for cell, field and contacttrenches, after forming the cell, field and contact trenches.

FIG. 16B shows a schematic plan view and a combined cross-sectional viewalong lines A-B and B-C of the semiconductor substrate portion of FIG.16A after filling the cell, field and contact trenches with asacrificial material.

FIG. 16C shows a schematic plan view, a combined cross-sectional viewalong lines A-B and B-C as well as a cross-sectional view along line X-Xof the semiconductor substrate portion of FIG. 16B after providingrecess grooves and body/channel zones using a first mask.

FIG. 16D shows a schematic plan view, a combined cross-sectional viewalong lines A-B and B-C as well as a cross-sectional view along line X-Xof the semiconductor substrate portion of FIG. 16C after providing asecond mask covering the active area.

FIG. 16E shows a schematic plan view, a combined cross-sectional viewalong lines A-B and B-C as well as a cross-sectional view along line X-Xof the semiconductor substrate portion of FIG. 16D after providing athird mask defining gate and field plate connection stripes.

FIG. 16F shows a schematic plan view, a combined cross-sectional viewalong lines A-B and B-C as well as a cross-sectional view along line X-Xof the semiconductor substrate portion of FIG. 16E after providing gateand field plate connection stripes.

FIG. 16G shows a schematic plan view and a combined cross-sectional viewalong lines A-B and B-C of the semiconductor substrate portion of FIG.16F after depositing a non-conformal layer.

FIG. 16H shows a schematic combined cross-sectional view along lines A-Band B-C of the semiconductor substrate portion of FIG. 16G afterproviding source and drain zones.

FIG. 16I is a schematic combined cross-sectional view corresponding tothe cross-sectional view of FIG. 16H after providing a contact barrierliner.

FIG. 16J is a schematic combined cross-sectional view corresponding tothe cross-sectional view of FIG. 16I after polishing a fill portion ofcontact structures.

FIG. 16K shows a schematic plan view and a combined cross-sectional viewof the semiconductor substrate portion of FIG. 16J after providing metalinterlayer connections.

FIG. 17 shows a schematic plan view and a combined cross-sectional viewalong lines A-B and B-C of a portion of a semiconductor substrate forillustrating an alternative layout of the cell, field and contacttrenches for the method as illustrated in FIGS. 16A to 16K according toa further embodiment.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part hereof, and in which are shownby way of illustrations specific embodiments in which the invention maybe practiced. It is to be understood that other embodiments may beutilized and structural or logical changes may be made without departingfrom the scope of the present invention. For example, featuresillustrated or described for one embodiment can be used on or inconjunction with other embodiments to yield yet a further embodiment. Itis intended that the present invention includes such modifications andvariations. The examples are described using specific language whichshould not be construed as limiting the scope of the appending claims.The drawings are not scaled and are for illustrative purposes only. Forclarity, the same elements have been designated by correspondingreferences in the different drawings if not stated otherwise.

The terms “having”, “containing”, “including”, “comprising” and the likeare open and the terms indicate the presence of stated structures,elements or features but not preclude additional elements or features.The articles “a”, an and the are intended to include the plural as wellas the singular, unless the context clearly indicates otherwise.

The term “electrically connected” describes a permanent low-ohmicconnection between electrically connected elements, for example a directcontact between the concerned elements or a low-ohmic connection via ametal and/or highly doped semiconductor. The term “electrically coupled”includes that one or more intervening element(s) adapted for signaltransmission may be provided between the electrically coupled elements,for example elements that are controllable to temporarily provide alow-ohmic connection in a first state and a high-ohmic electricdecoupling in a second state.

The Figures illustrate relative doping concentrations by indicating “−”or “+” next to the doping type “n” or “p”. For example, “n⁻” means adoping concentration that is lower than the doping concentration of an“n”-doping region while an “n⁺”-doping region has a higher dopingconcentration than an “n”-doping region. Doping regions of the samerelative doping concentration do not necessarily have the same absolutedoping concentration. For example, two different “n”-doping regions mayhave the same or different absolute doping concentrations.

FIGS. 1A-1C and FIGS. 2A-2C illustrate a sequence of processes providingdrain zones self-aligned to a gate electrode. The term “self-aligned”indicates that the position of the drain zones in relation to the gateelectrodes and gate dielectrics is not subject to a possiblemisalignment between two or more photolithographic masks. Instead, theposition of the drain zones relative to the gate dielectrics is definedby well-controllable, non-photolithographic patterning processes.

A semiconductor substrate 500 a consists of or contains a semiconductorlayer 100 a of a single-crystalline semiconductor material. Thesingle-crystalline semiconductor material may be silicon Si, siliconcarbide SiC, germanium Ge, a silicon germanium crystal SiGe, galliumnitride GaN or gallium arsenide GaAs, by way of example. According to anembodiment, the semiconductor substrate 500 a may be a silicon wafer.According to another embodiment the semiconductor substrate 500 a is anSOI (silicon-on-insulator) wafer, e.g. an SOG (silicon-on-glass) wafer,with the semiconductor layer 100 a disposed on an insulator substrate.The semiconductor layer 100 a may be grown by epitaxy at least in partsand may include two or more sub-layers of a first conductivity typediffering in a mean impurity concentration. The semiconductor substrate500 a may include further semiconductor and dielectric layers inaddition to the semiconductor layer 100 a.

The semiconductor layer 100 a has a planar first surface 101 and aplanar second surface 102 parallel to the first surface 101. A normal tothe first and second surfaces 101, 102 defines a vertical direction anddirections orthogonal to the vertical direction are lateral directions.

Dielectric stripe structures 200 extend from the first surface 101 intothe semiconductor layer 100 a. The dielectric stripe structures 200 maybe arranged at a regular center-to-center distance (pitch). Regions ofthe semiconductor layer 100 a between neighboring dielectric stripestructures 200 form semiconductor fins 180. The longitudinal axes of thedielectric stripe structures 200 define a first lateral direction. Thedielectric stripe structures 200 may consist of one single material ormay have a layered structure of two or more sub-layers of differentdielectric materials including semiconductor oxides, e.g. silicon oxide,silicon oxynitride, silicon oxide based on TEOS (tetraethylorthosilicate) or thermally grown silicon oxide. According to anembodiment, the dielectric stripe structures 200 have an approximatelyhomogeneous structure.

In addition, further dielectric stripe structures 201 may extend fromthe first surface 101 into the semiconductor layer 100 a, wherein thelongitudinal axes of the further dielectric stripe structures 201 areparallel to the first lateral direction. The further dielectric stripestructures 201 may be regularly arranged at a regular pitch which may bethe same as the pitch of the dielectric stripe structures 200. Accordingto other embodiments, the pitch of the further dielectric stripestructures 201 may be greater than the pitch of the dielectric stripestructures 200. The further dielectric stripe structures 201 may bespaced from the dielectric stripe structures 200 in the first lateraldirection.

The further dielectric stripe structures 201 may be partially orcompletely filled with dielectric and/or conductive materials. Accordingto an embodiment, each further dielectric stripe structure 201 is linedwith a layer of the material forming the dielectric stripe structures200 and includes a void in a central portion.

A first mask layer is deposited and patterned by a photolithographicprocess to form a first mask 510. The first mask 510 covers at least afirst area 610. The first area 610 includes first stripe sections 261including first end portions of the dielectric stripe structures 200oriented to the further dielectric stripe structures 201 as well asfirst fin sections 181 of the semiconductor fins 180 between the firststrip sections 261. The first area 610 may include the furtherdielectric stripe structures 201 as well as portions of thesemiconductor layer 100 a between neighboring further dielectric stripestructures 201 and between the dielectric stripe structures 200 and thefurther dielectric stripe structures 201. An opening 515 in the firstmask 510 exposes at least a second stripe section 262 of the dielectricstripe structures 200 and second fin sections 182 of the semiconductorfins 180 between the second stripe sections 262. The second area 620directly adjoins to the first area 610.

According to the illustrated embodiment, the second stripe sections 262include second end faces of the dielectric stripe structures 200opposite to the first end faces. According to other embodiments, thefirst mask 510 may cover a third area including the second end faces ofthe dielectric stripe structures 200, wherein the second area 620 isbetween the first area 610 and the third area.

Using the first mask 510 as an impurity mask, e.g. as an implant mask,impurities 516 are introduced through the opening 515 into the secondfin sections 182. The conductivity type of the implanted impurities 516is complementary to the background impurity type of the semiconductorlayer 100 a. According to an embodiment, the background impurity type ofthe semiconductor layer 100 a is the n type and the implanted impurities516 are of the p type, e.g. boron B for a semiconductor layer 100 a ofsilicon. For transistors of the enhancement type, the introducedimpurities may counterdope the original background impurities to formbody zones of a second, complementary conductivity type. For transistorsof the depletion type, the introduced impurities may locally reduce theeffective net impurity concentration to form channel zones of the firstconductivity type. For example, multiple boron implants at differentdoses, energies and tilt angles may shape the channel/body zones 115 a.

FIGS. 1A to 1C show p type provisional channel/body zones 115 a formedby the implanted impurities 516 at least in the second fin sections 182.Apart from some impurity straddling immanent to the implantationprocess, the first fin sections 181 in substance remain unaffected andkeep the original background impurity concentration.

An etch mask 510 x is formed from the first mask 510. According to anembodiment the first mask 510 provides the etch mask 510 x without beingsubjected to processes changing the contour of the opening 515.According to other embodiments, the first mask 510 is trimmed, wherein alateral cross-sectional area of the opening 515 is increased by apredefined amount to form the etch mask 510 x. For example, the firstmask 510 may be subjected to an isotropic etch process and/or a thermaltreatment or may be exposed to radiation or any other material-consumingor densifying process pulling back the lateral edges of the first mask510 by a predefined amount. For example, the first mask 510 may be anamorphous or polycrystalline semiconductor material which may besubjected to an isotropic etch process. According to other embodiments,the first mask 510 may be a mask containing carbon which may be shrunkin a thermal process. The material of the first mask 510 may be amaterial which may be densified by thermal treatment, by exposure toradiation or by a chemical reaction in a gaseous or fluid ambient andagainst which the material of the dielectric stripe structure 200 can beetched with sufficient selectivity.

Using the original or trimmed first mask 510 as the etch mask 510 x, theexposed portions of the dielectric stripe structures 200 are recessed.The etch may recess the material of the dielectric stripe structures 200with high selectivity against the material of the semiconductor layer100 a. A gate dielectric 205 may be formed on exposed surfaces of thesemiconductor fins 180.

FIGS. 2A to 2C show the etch mask 510 x whose edge has been pulled backfrom the original edge of the untrimmed first mask 510 of FIGS. 1A to 1Cby a drain extension length c. Recess grooves 150 a extend from a planespanned by the first surface 101 into the former dielectric stripestructures 200. Remnant portions of the dielectric stripe structures 200below the trimmed first mask 510 x may form first cell insulators 202 aat the first end portions. Remnant portions of the dielectric stripestructures 200 below the recess grooves 150 a may form second cellinsulators 202 b. The gate dielectric 205 covers top surfaces of thesemiconductor fins 180 parallel to the first surface 101 and sidewallsof the semiconductor fins 180 tilted, e.g. perpendicular, to the firstsurface 101.

Third cell insulators 202 c having a lateral width greater than the gatedielectric 205 may be provided at the second end faces of the formerdielectric stripe structures 200. For example, the third cell insulators202 c may be remnant portions of the dielectric stripe structures 200covered by a portion of the first mask 510 in a third area as describedabove. According to other embodiments, impurities may be implanted intothe semiconductor material at the second end faces after forming therecess grooves 150 a to exploit increased oxide growth on heavily dopedsubstrates.

The drain extension length c can be reliably defined without anadditional photolithographic mask and without considering mask alignmenttolerances. The drain extension is an overlap between an active gateelectrode provided in the recessed groove 150 a and a drift zone 120formed by a portion of the semiconductor layer 100 a directly adjoiningthe provisional channel/body zones 115 a along the first lateraldirection and having the background impurity type as well as thebackground impurity concentration. The overlap ensures a reliableconnection between an accumulation or inversion channel formed in thesemiconductor fins 180 along the gate dielectrics 205 throughchannel/body zones emerging from the provisional channel/body zones 115a on the one hand and the drift zone 120 on the other hand. The thingate dielectric 205 in the drain extension zone ensures a low parasiticgate-to-drain capacitance C_(GD).

FIGS. 3A and 3B refer to a lateral power semiconductor device 500 withFinFET (fin field effect transistor) cells and exploiting field platecompensation. The illustrated embodiment refers to an n-channel IGFET(insulated gate field effect transistor), for example a p-channel MOSFETin the usual meaning including both gate electrodes containing metal aswell as gate electrodes without metal, of the enhancement type.Equivalent considerations apply to p-channel IGFETs of the enhancementtype as well as n-channel and p-channel IGFETs of the depletion type.

A semiconductor portion 100 of the semiconductor device 500 is based ona single-crystalline semiconductor material, for example silicon Si,silicon carbide SiC, germanium Ge, a silicon germanium crystal SiGe,silicon carbide SiC, gallium nitride GaN or gallium arsenide GaAs. Afirst surface 101 and an opposite second surface 102 of thesemiconductor portion 100 are parallel to each other.

A plurality of parallel, buried cell stripes 350 extend from the firstsurface 101 into the semiconductor layer 100. The longitudinal axes ofthe buried cell stripes 350 extend parallel to a first lateral directionparallel to the first surface 101. The cell stripes 350 are regularlyarranged adjacent to each other along a second lateral directionperpendicular to the first lateral direction at a regular pitch. Thepitch of the cell stripes 350 may be between 100 nm and 1000 nm, e.g.between 200 nm and 500 nm. A width of the cell stripes 350 along thesecond lateral direction may be between 50 and 200 nm, by way ofexample.

Each cell stripe 350 includes a buried gate electrode 150 dielectricallyinsulated from the surrounding material of the semiconductor portion100. A first cell insulator 202 a dielectrically insulates the buriedgate electrode 150 along the first lateral direction at a first end faceof the cell stripe 350. A second cell insulator 202 b dielectricallyinsulates the buried gate electrode 150 in the vertical direction. Athird cell insulator 202 c dielectrically insulates the buried gateelectrode 150 in the first lateral direction at a second end faceopposite to the first end face. Gate dielectrics 205 dielectricallyinsulate the buried gate electrodes 150 in the second lateral directionfrom semiconductor fins 180 formed from regions of the semiconductorportion 100 between the cell stripes 350. In addition, the gatedielectrics 205 cover a top surface of portions of the semiconductorfins 180 parallel to the first surface 101 and dielectrically insulategate connection stripes 151 from the semiconductor fins 180.

Buried, parallel field plate stripes 360 are spaced from the cellstripes 350 along the first lateral direction and extend from the firstsurface 101 into the semiconductor layer 100. The longitudinal axes ofthe buried field plate stripes 360 are parallel to the first lateraldirection and the lateral axes of the cell stripes 350. The field platestripes 360 are arranged along the second lateral direction. The fieldplate stripes 360 may be arranged in a regular pattern at a regularpitch which may be equal to or greater than the pitch of the cellstripes 350. The field plate stripes 360 may have a width along thesecond lateral direction which is greater than the width of the cellstripes 350. Each field plate stripe 360 may include a buried fieldplate electrode 160 of a conductive material and a field dielectric 206dielectrically insulating the field plate electrode 160 from thesemiconductor material of the surrounding semiconductor layer 100. Afield plate connection stripe 161 may electrically connect the fieldplate electrodes 160 with each other and a further terminal or anelectric circuit, e.g. a source line.

The buried gate and field plate electrodes 150, 160 extending along thesecond lateral direction as well as the gate and field plate connectionstripes 151, 161 may be provided from the same or from differentconductive materials. According to an embodiment, the buried gate andfield plate electrodes 150, 160 as well as the gate and field plateconnection stripes 151, 161 may consist of or may contain a portion ofheavily doped polycrystalline silicon. According to other embodiments,the buried gate and field plate electrodes 150, 160 as well as the gateand field plate connection stripes 151, 161 may include a metalcontaining portion.

The gate dielectric 205 may consist of or contain a semiconductor oxidelayer, e.g. a thermally grown silicon oxide, a deposited silicon oxidelayer, for example a silicon oxide using TEOS as precursor material, asilicon nitride layer or a silicon oxynitride layer. The fielddielectric 206 as well as the first, second and third cell insulators202 a, 202 b, 202 c may be provided from the same or from differentdielectric materials. For example they may consist of or contain asemiconductor oxide layer, e.g. a thermally grown silicon oxide, adeposited silicon oxide layer, a silicon nitride layer or a siliconoxynitride layer.

A dielectric structure 220 may directly adjoin the first surface 101.The dielectric structure 220 may consist of or contain a thermally grownsemiconductor oxide layer, for example a silicon oxide layer, and one ormore deposited layers, for example a deposited silicon oxide layer, ordoped or undoped silicate glass. The gate connection stripes 151 fillopenings in the dielectric structure 220 in the vertical projection ofthe buried gate electrodes 150. The field plate connection stripes 161may fill openings in the dielectric structure 220 in the verticalprojection of the buried field plate electrodes 160.

Buried contact stripes 370 extend through the dielectric structure 220and into the semiconductor layer 100. The buried contact stripes 370extend along the second lateral direction in a distance to the cellstripes 350 and in a distance to the field plate stripes 360. A buriedcontact stripe 370 neighboring the illustrated column of cell stripes350 provides a source connection for the cell column including thecolumn of cell stripes 350 and the column of field plate stripes 360. Aburied contact stripe 370 neighboring the illustrated column of fieldplate stripes 360 provides a drain connection of the cell column. Theburied contact stripes 370 may be shared between neighboring cellcolumns. For example, each two cell columns may be arrangedmirror-inverted with respect to an intermediate buried contact stripe370, wherein the intermediate buried contact stripe 370 may be effectiveas source connection or as drain connection for both cell columns.According to other embodiments the same buried contact stripe 370 may beeffective as source connection for a first cell column and as drainconnection for a second cell column.

The buried contact stripes 370 include one or more conductive materials.According to an embodiment, the buried contact stripes 370 include abarrier liner 371 along the interface with the semiconductor layer 100.The barrier liner 371 may have a thickness of 5 nm to 100 nm and mayconsist of or contain titanium Ti, titanium nitride TiN, tantalum Ta, ortantalum nitride TaN, by way of example. Each buried contact stripe 370may further include a fill portion 372 at least partially filling thecross-sectional area of the contact stripe 370 within the barrier liner371. The material of the fill portion 372 may be tungsten W, by way ofexample.

Contact plugs 305 in an interlayer dielectric 230 on the dielectricstructure 220 may electrically connect the buried contact structures 370as well as the gate and field plate connection stripes 151, 161 withfurther structures of electric circuits integrated in the semiconductordevice 500 or with terminal pads. A substrate electrode 390 may directlyadjoin the second surface 102.

For the illustrated embodiment related to an n-IFGET of the enhancementtype, the semiconductor portion 100 may have an n-type background dopingwith an impurity concentration between 1×10¹³ cm⁻³ and 1×10¹⁶ cm⁻³, byway of example.

P type or weakly doped n-type channel/body zones 115 are formed in thesemiconductor fins 180 between neighboring cell stripes 350. An overlapbetween the buried gate electrodes 150 and the gate dielectrics 205 onthe one side and an n type drift zone 120 at the other side defines adrain extension length c.

On both sides of the buried contact stripes 370 heavily doped sourcecontact zones 111 and drain contact zones 130 provide a low ohmicconnection between the drift zone 120 and the corresponding buriedcontact stripe 370 as well as between a source zone 110 and thecorresponding buried contact stripe 370, wherein the source zone 110extends between the heavily doped source contact zone 111 and thechannel/body zones 115. Between the source zones 110 and thechannel/body zones 115 a junction, e.g. a pn junction in the case ofenhancement-type FET cells or an nn-junction in the case ofdepletion-type FET cells, is approximately aligned or self-aligned witha corresponding edge of the gate dielectrics 205 and the buried gateelectrodes 150. A buried heavily doped p type contact zone 117 directlyadjoining a bottom portion of the buried contact stripes 370 extendsbelow the heavily doped source contact zone 111 and the source zone 110and is structurally connected to a lower portion of the channel/bodyzones 115 below the cell stripes 350.

In the blocking mode, a suitable voltage applied to the buried fieldplate electrodes 160, for example the potential applied to the sourcezones 110, supports the depletion of the drift zone 120 and incombination with a long drift path between the channel/body zones 115and the contact stripe 370 on the right hand side providing the drainconnection ensures a high blocking voltage capability. In the on-stateof enhancement-type FET cells, a suitable voltage applied to the gateelectrodes 150 generates inversion channels of minority charge carriersin the channel/body zones 115 along the gate dielectrics 205 between thesource zone 110 and the drift zone 120. In the off-state ofdepletion-type FET cells, a suitable voltage applied to the gateelectrodes 150 depletes the channel/body zones 115 between the sourcezone 110 and the drift zone 120.

The self-aligned and well-defined drain extension with the length c,which may range from 0 to several nm, provides a low and uniformgate-to-drain capacitance C_(gd) and a sufficient punch-through of thegate potential into the channel/body zones 115. In addition, thestraddle of the implant introducing the impurities of the channel/bodyzones 115 can be compensated for. Self-aligning the junction between thesource zones 110 and the channel/body zones 115 on the one hand and thecorresponding edge of the gate dielectrics 205 and gate electrodes 150on the other hand reduces intra-chip and inter-chip fluctuations of thegate-to-source capacitance C_(gs).

FIGS. 4A to 11B illustrate a method of manufacturing a semiconductordevice with a self-aligned junction between channel/body zone and drainzone according to an embodiment including a thermal growth of a cellinsulator spatially separating the gate electrode from a source zone.

Referring to FIGS. 4A to 4D a semiconductor substrate 500 a is providedthat includes a semiconductor layer 100 a from a single-crystallinesemiconductor material. For example, a first epitaxial layer 191 may begrown on an underlayer in a thickness of 2 μm and 10 μm, for example atleast 4 μm and at most 6 μm. The first epitaxial layer 191 may bein-situ doped. For example, the first epitaxial layer 191 may containimpurities of a first conductivity type, wherein the impurityconcentration may be between 1×10¹⁴ cm⁻³ and 1×10¹⁶ cm⁻³, for example atleast 5×10¹⁴ cm⁻³ and at most 5×10¹⁵ cm⁻³.

Spatially separated heavily doped contact zones 117 of the secondconductivity type may be formed along a process surface of the firstepitaxial layer 191, for example by a deep implant process. A secondepitaxial layer 192 of the first conductivity type may be grown byepitaxy on the process surface of the first epitaxial layer 191 in athickness of 1 μm and 3 μm, for example at least 1.3 μm and at most 2μm. The second epitaxial layer 192 may be in-situ doped and may containimpurities of the first conductivity type in a concentration which maybe at least ten times the impurity concentration in the first epitaxiallayer 191. For example, the impurity concentration in the secondepitaxial layer 192 may be between 1×10¹⁶ cm⁻³ and 1×10¹⁸ cm⁻³, forexample at least 5×10¹⁶ cm⁻³ and at most 2×10¹⁷ cm⁻³. The first andsecond epitaxial layers 191, 192 including the contact zones 117 form asemiconductor layer 100 a mainly consisting of single-crystallinesemiconductor material, for example single-crystalline silicon Si,germanium Ge, a silicon germanium crystal SiGe, or others.

The illustrated embodiment refers to n-type FET cells with the firstconductivity type being the n-type. Equivalent considerations apply top-type FET cells with the first conductivity type being the p-type.

A hard mask material against which the semiconductor material of thesemiconductor layer 100 a can be etched with high selectivity may bedeposited on a first surface 101 of the semiconductor layer 100 a andmay be patterned by a photolithographic process to form a trench mask.The hard mask layer may include an oxide layer with a thickness of 400to 600 nm, a carbon layer with a thickness of 250 to 350 nm and asilicon oxynitride layer with a thickness of 40 to 60 nm. Mask openingsof the trench mask correspond to cell and field plate stripes. Using thetrench mask, cell and field plate trenches 450, 460 may be etched fromthe first surface 101 into the semiconductor layer 100 a. A conformaldielectric layer 200 a is formed on the resulting patterned surface.

FIG. 4A shows the cell trenches 450 arranged parallel to each other at aregular pitch. The longitudinal axes of the cell trenches 450 define afirst lateral direction parallel to the first surface 101. Portions ofthe semiconductor layer 100 a between neighboring cell trenches 450 formsemiconductor fins 180. A pitch of the cell trenches 450 may range from100 nm to 1 μm. A width of the cell trenches 450 along a second lateraldirection orthogonal to the first lateral direction may be range from 40to 500 nm. The cell trenches 450 are arranged in a column extendingalong a second lateral direction orthogonal to the first lateraldirection.

A plurality of parallel field plate trenches 460 are formed in adistance to the cell trenches 450 with respect to the first lateraldirection. A width of the field plate trenches 460 along the secondlateral direction may be greater than the width of the cell trenches450. A pitch of the field plate trenches 460 may be the same or may begreater than the pitch of the cell trenches 450.

FIG. 4B shows dielectric stripe structures 200 formed by the celltrenches 450 completely filled with the conformal dielectric layer 200a. The conformal dielectric layer 200 a may be a homogenous layer or maycontain two or more sub-layers including, e.g., a thermally grownsilicon oxide and an LPTEOS (low-pressure TEOS) layer provided in alow-pressure deposition process using TEOS as precursor material.

FIG. 4C shows further dielectric stripe structures 201 formed from thefield plate trenches 460 partially filled with the conformal dielectriclayer 200 a. The conformal dielectric layer 200 a does not fill thefield plate trenches 460 completely and leaves a void in the center ofthe respective field plate trench 460.

In FIG. 4D the semiconductor fins 180 are alternately arranged with thedielectric stripe structures 200 along the second lateral direction. Thecell trenches 450 may reach or may extend into the buried contact zones117.

A first mask layer may be deposited on the conformal dielectric layer200 a. The first mask layer may include a main mask layer 511 againstwhich the materials of the conformal dielectric layer 200 a and thesemiconductor material of the semiconductor layer 100 a can be etchedwith high selectivity. For example, the main mask layer 511 is a carbonlayer. The first mask layer may include a transfer layer 519, which maytransfer the pattern from a photoresist layer into the main mask layer511. For example, the transfer layer 519 may be a silicon oxynitridelayer or an amorphous silicon layer.

A second photolithographic process patterns the first mask layer toobtain a first mask 510 covering a first area 610 and including anopening 515 exposing a second area 620. The first area 610 includesfirst stripe sections 261 of the dielectric stripe structures 200 andmay include the further dielectric stripe structures 201 as well asfirst fin sections 181 of the semiconductor fins 180 between the firststripe sections 261. The second area 620 includes second stripe sections262 directly adjoining the first stripe sections 261, respectively, andsecond fins sections 182 between the second stripe sections 262.Remnants of a photoresist applied on the first mask layer may be removedafter transferring the pattern of the photoresist into the transferlayer 519.

Using the first mask 510 as an implant mask, impurities 516 of thesecond conductivity type are introduced from the first surface 101 intothe second fin sections 182 and into further portions of thesemiconductor layer 100 a directly adjoining the second fin portions 182at a side of the cell trenches 450 opposite to the field plate trenches460. The implant may include several steps, e.g. at least three or fivesteps, that may differ from each other in at least one of implant energylevel, implant dose and implant angle, wherein the latter may vary,e.g., in a range from 3 degree to 7 degree with respect to the verticaldirection. According to embodiments related to FET cells of theenhancement type, the implanted impurities may counter-dope thebackground doping of the first conductivity type for providingprovisional body zones of the second conductivity type. As regardsembodiments related to depletion type FET cells, the implantedimpurities 516 may locally reduce the in-situ impurity concentration inthe second epitaxial layer 192 to generate provisional channel zones.

FIG. 5B shows the provisional channel/body zones 115 a emerging fromcounter-doping the in-situ doped impurities of the first conductivitytype below the mask openings 515. The provisional channel/body zones 115a may be structurally connected with the buried contact zone 117.

FIGS. 5C and 5D show the first mask 510 covering the further dielectricstripe structures 201 and the counter-doped second fin sections 182between the dielectric stripe structures 200. Remnants of the transferlayer 519 may be removed and the remaining main mask layer 511 of thefirst mask 510 may be trimmed (shrunk), for example by materialdensification or isotropic material consumption, e.g. by a chemicalprocess like an isotropic etch process, an anneal, or by exposing themain mask layer 511 to radiation. Using the trimmed first mask as anetch mask 510 x, recess grooves 150 a are etched into exposed portionsof the dielectric stripe structures 200.

FIG. 6A shows the trimmed etch mask 510 x whose outer edge definingwidened opening 515 x is pulled back by at least nm, e.g., at least 10nm with respect to the corresponding edge of the first mask 510.According to an embodiment the pull back is in a range from 10 nm to 200nm. The etch mask 510 x still covers an end portion of the dielectricstripe structures 200 oriented to the further field plate trench 460.The widened opening 515 x in the etch mask 510 x exposes a greaterportion of the dielectric stripe structures 200 than the first mask 510before trimming.

FIG. 6B shows the recess grooves 150 a formed in a section of thedielectric stripe structure 200 exposed by the widened opening 515 x ofthe etch mask 510 x. A portion of the dielectric stripe structure 200covered by the etch mask 510 x forms a first cell insulator 202 a in theend portion of the cell trench 450 oriented to the field plate trenches460. A second cell insulator 202 b is formed from a remnant portion ofthe dielectric stripe structure 200 in a lower portion of the celltrenches 450.

FIG. 6C shows a drain extension length c defined by the shrinkagebetween the first mask 510 of FIG. 5A and the etch mask 510 x. The drainextension length is the overlap of a gate electrode formed in the recessgroove 150 a and a drift zone 120 formed form a non-counter-dopedportion of the second epitaxial layer 192 adjoining to the provisionalchannel/body zones 115 a in the first lateral direction.

FIG. 6D shows the exposed portions of the semiconductor fins 180 betweenthe recess grooves 150 a.

Impurities 517 of the first conductivity type may be introduced intoregions of the semiconductor portion 100 exposed at the end face of therecess grooves 150 a after removing the etch mask 510 x. For example,arsenic atoms As may be implanted at an implant angle α with respect toa normal to the first surface 101 and parallel to the first lateraldirection, wherein the implant angle α is between 0° and 90°. Inaddition, non-doping atoms may be implanted at the same implant angle αand parallel to the first lateral direction, for example fluorine Fand/or nitrogen N atoms.

FIGS. 7A and 7B show source zones 110 of the first conductivity typeresulting from the tilted implant 517.

As illustrated in FIGS. 7C and 7D impurity regions 518 may be formedalong the first surface 101 in regions of the semiconductor portion 100including the semiconductor fins 180 which are not covered by remnantsof the conformal dielectric layer 200 a. The impurity zones 518 may beremoved using an anisotropic etch, by way of example. The semiconductorsubstrate 500 a may be subjected to a cleaning process, for example byusing DHF (diluted hydrofluoric acid). Exposed portions of thesemiconductor fins 180 may be oxidized.

FIG. 8A illustrates the grown gate dielectrics 205 formed on exposedregions of the semiconductor portion 100 including the semiconductorfins 180 which are not covered by remnants of the conformal dielectriclayer 200 a.

Since a high impurity concentration in the underlayer locally increasesthe oxide growth rate, a third cell insulator 202 c formed at theexposed end face of the recess grooves 150 a is significantly thickerthan the gate dielectric 205 grown along the sidewalls and on top of thesemiconductor fins 180.

FIG. 8B shows the thick third cell insulator 202 c and FIG. 8C shows thegate dielectric 205 grown on regions of the semiconductor portion 100including the semiconductor fins 180 not covered by remnants of theconformal dielectric layer 200 a.

FIG. 8D shows the provisional channel/body zones 115 a formed inportions of the semiconductor fins 180, wherein the gate dielectric 205covers the semiconductor fins 180 along the two sidewalls tilted to thefirst surface 101 and along a top surface, which extends parallel to thefirst surface 101 and connects the two sidewalls.

One or more conductive materials may be deposited that fill the recessgrooves 150 a and the voids in the further dielectric stripe structures201 and that cover portions of the conformal dielectric layer 200 a andthe grown gate dielectric 205. The conductive materials may be or maycontain heavily doped polycrystalline silicon, for example heavily ntype polycrystalline silicon. The deposited conductive material may bepatterned by a photolithographic process to generate gate connectionstripes 151 and field plate connection stripes 161.

FIG. 9A shows the spatially separated gate and field plate connectionstripes 151, 161 extending along the second lateral direction and.

FIG. 9B shows a buried gate electrode 150 formed from a portion of theconductive material filling the recess grooves 150 a of FIG. 8B. Thegate connection stripes 151 structurally and electrically connect theburied gate electrodes 150 arranged along the second lateral directionand form active gate electrode portions above the semiconductor fins180.

FIG. 9C shows portions of the conductive material filling the voids inthe field stripe structures 201 forming buried field plate electrodes160. A field plate connection stripe 161 may structurally andelectrically connect buried field plate electrodes 160 arranged alongthe second lateral direction.

FIG. 9D shows a gate connection stripe 151 connecting the buried gateelectrodes 150. In combination with the buried gate electrodes 150 thegate connection stripe 151 encloses portions of the semiconductor fins180 on three sides.

A thermal oxidation process may be performed to passivate exposedsurfaces of the gate and field plate connection stripes 151, 161. Aconformal oxide spacer layer may be deposited and recessed using ananisotropic etch process to generate oxide spacers 210 along verticalsidewalls of the gate and field plate connection stripes 151, 161 asshown in FIGS. 10A-10C.

An interlayer dielectric 230, for example consisting of or containing aTEOS layer, may be deposited. Contact trenches 470 extending along thesecond lateral direction are introduced from an exposed surface of theinterlayer dielectric 230 into the semiconductor layer 100 a. Thecontact trenches 470 may reach the buried contact zones 170, may extendinto the buried contact zones 170 or may cut through the buried contactzones 117. Impurities of the first conductivity type may be introducedinto sections of the semiconductor layer 100 a exposed by sidewalls ofthe contact trenches 470, e.g. by a diffusion process using outdiffusionfrom a sacrificial layer or a diffusion from a gaseous phase. Impuritiesof the second conductivity type may be implanted through the bottom ofthe contact trenches 470 at least in sections of the contact trenches470 along a lateral direction orthogonal to the cross-sectional plane.

FIGS. 11A to 11B show contact zones 111, 130 resulting from introducingthe impurities of the first conductivity type. The contact zones 111,130 provide a low ohmic electric connection between contacts stripessubsequently formed in the contact trenches 470 and the source zones 110formed between the contact and cell stripes as well as between thecontact stripes and the drift zone 120.

Conductive materials may be deposited to provide contact stripes in thecontact trenches 470. For example a barrier liner may be deposited toline the contact trenches 470. The barrier liner may consist of orcontain titanium, titanium nitride, tantalum and/or tantalum nitride, byway of example. A fill portion of the contact stripes may contain orconsist of tungsten W.

FIGS. 12A to 15D relate to a method providing a self-alignment of bothdrain and source zones to gate electrodes by combining the positioninformation about the contact trenches and the body/channel zones in onemask.

A semiconductor substrate 500 a with dielectric stripe structures 200,further dielectric stripe structures 201 and a conformal dielectriclayer 200 a may be provided as described with regard to FIGS. 4A to 4D.

Other than the first mask 510 of FIGS. 5A to 5D, the first mask 510shown in FIG. 12A covers a third area 630 including third stripesections 263 comprising end portions of the dielectric stripe structure200 opposite to the first end portions contained in the first area 610as well as third fin sections 183 between the third stripe sections 263.The second stripe portions 262 and the second fin portions 182 includedin the second area 620 are central portions of dielectric stripestructures 200 and the semiconductor fins 180 with reference to thefirst lateral direction between the first and third areas 261, 263. Afourth area 640 may be defined adjoining the third area 630, wherein thethird area 630 separates the second and fourth areas 620, 640. The firstmask 510 covers the first and third areas 610, 630 and openings 515 inthe first mask 510 expose the second and fourth areas 620, 640.Impurities 516 of an impurity type complementary to a background dopingof the semiconductor layer 100 a are introduced through the openings515.

As shown in FIGS. 12B to 12D the introduced impurities form body/channelzones 115 in the second area 620 and doped zones 115 b in the fourtharea 640.

The first mask 510 may include a main mask layer 511 against which thematerial of the conformal dielectric layer 200 a and the semiconductormaterial of the semiconductor layer 100 a can be etched with highselectivity. According to an embodiment, the main mask layer 511 is acarbon layer. The first mask 510 may include a transfer layer 519 whichmay be, by way of example, a silicon oxynitride layer or an amorphoussilicon layer. The first mask 510 may further include a resist maskportion bearing on the transfer layer 519, wherein the impurities 516may be introduced, e.g. implanted, before stripping the resist mask.According to other embodiments, the main mask layer 511 is provided witha thickness which is sufficiently high to allow sufficiently deep boronB implants, wherein the impurities 516 are introduced without a resistmask portion.

After introducing the impurities 516, a possible resist mask portion maybe stripped and the remaining hard mask may or may not be pulled back.Recess grooves 150 a are formed in the dielectric stripe structures 200by etching the material of the conformal dielectric layer 200 aselectively against the semiconductor material of the semiconductorlayer 100 a and the first mask 510.

According to the illustrated embodiment, the openings 515 in FIGS. 13Ato 13D approximately or completely correspond to the openings 515 ofFIGS. 12A to 12D. According to other embodiments, the openings 515 inFIG. 13A to 13D may have a larger width along the first lateraldirection than the mask openings 515 in FIGS. 12A to 12D.

In the openings 515, the anisotropic etch removes a portion of theconformal dielectric layer 200 a in the fourth area 640 from the firstsurface 101. In the second areas 620 the anisotropic etch cuts throughthe conformal dielectric layer 200 a above the dielectric stripestructures 200 and forms recess grooves 150 a in the dielectric stripestructures 200. Further, the anisotropic etch removes portions of theconformal dielectric layer 200 a from the central second fin sections182 above the body/channel zones 115.

As regards FIG. 13B, remnant portions of the dielectric stripe structure200 form a first cell insulator 202 a in the first end portion, a secondcell insulator 202 b in the vertical direction of the recess groove 150a and a third cell insulator 202 c in the second end portion.

As illustrated in detail in FIGS. 13C and 13D, the central secondportions 182 of the semiconductor fins 180 are exposed at a top surfaceparallel to the first surface 101 and at upper portions of fin sidewallsoriented to the first surface 101.

According to another embodiment, the order of etching as illustrated inFIGS. 13A to 13D and implanting as illustrated in FIGS. 12A to 12D isinversed allowing a trimming of the resist.

The selectivity of the oxide etch to the silicon etch may be 10:1, i.e.the removal rate of oxide is about ten times the removal rate ofsilicon. The high-selective etch allows a good oxide profile control.The semiconductor substrate 500 a may be cleaned using DHF. Gatedielectrics 205 may be provided by thermal growth of silicon oxide onthe exposed surfaces of the central second portions 182 of thesemiconductor fins 180. A conductive material may be deposited andpatterned by a photolithographic process and may be provided with oxidespacers 210. As regards the formation of the oxide spacers, reference ismade to the description of FIGS. 9A to 10C.

FIGS. 14A to 14D insofar approximately correspond to FIGS. 10A to 10Cand 9D. Apart from details of the third cell insulator 202 c anddielectric structures above the first surface 101, the semiconductorsubstrate 500 a of FIGS. 14A to 14D corresponds to that described inFIGS. 10A to 10C and 9D. The oxide spacer etch may also remove an oxidelayer grown contemporaneously with the gate dielectric 205 in the fourtharea 640 wherein the etch exposes a portion of the semiconductor layer100 a in the fourth area 640. The semiconductor substrate 500 a may becleaned using DHF and in the exposed portions of the semiconductor layer100 a in the fourth area 640, an anisotropic etch may remove siliconselectively against the material of the conformal dielectric layer 200 ato form contact trenches 470 extending along the second lateraldirection in place of the doped zones 115 b. The positional informationabout the contact trenches 470 is taken from the same mask defining theposition and size of the body/channel zones 115 and the gate dielectric205 such that no mask alignment margins must be taken intoconsideration.

Impurities 519 of the first conductivity type may be introduced into thesemiconductor layer 100 a through the sidewalls of the contact trenches470, e.g. by out diffusion from the gaseous phase or a sacrificialmaterial, or implanted by an angled implant with an implant angle to thenormal between 0 and 90° and parallel to the first lateral direction.The introduced impurities 519 may form heavily doped source contactzones 111 and heavily doped drain contact zones 130 extending parallelto the vertical sidewalls of the contact trenches 470.

FIGS. 15A to 15C show the implanted source contact zones 111 and draincontact zones 130. Formation of contact stripes in the contact trenches470 may follow as described with reference to FIGS. 11A to 11B.

FIGS. 16A to 16K relate to a further method facilitating self-alignmentof both the source and drain zones to the gate electrodes in atransistor cell array including lateral FinFET cells with field plateelectrodes.

A semiconductor substrate 500 a includes a semiconductor layer 100 athat may include a first epitaxial layer 191 and a second epitaxiallayer 192 grown on the first epitaxial layer 191. The first and secondepitaxial layers 191, 192 may have the same conductivity type, forexample the n type. P type contact zones 117 may be formed in the firstepitaxial layer 191 along the interface with the second epitaxial layer192.

Using a single lithographic mask, cell trenches 450, field platetrenches 460 and contact trenches 470 are introduced from a firstsurface 101 of the semiconductor layer 100 a into the semiconductorlayer 100 a. The cell trenches 450 are arranged parallel to each otherand have longitudinal axes parallel to a first lateral direction.Portions of the semiconductor layer 100 a between neighboring celltrenches 450 form semiconductor fins 180. The cell trenches 450 arearranged at regular pitches along a second lateral directionperpendicular to the first lateral direction. The field plate trenches460 are arranged parallel to each other along the second lateraldirection at a distance to the cell trenches 450. Longitudinal axes ofthe field plate trenches 460 are parallel to the first lateraldirection. Contact trenches 470 extend along the second lateraldirection, wherein a column of the cell trenches 450 and a column of thefield plate trenches 460 are arranged between a pair of contact trenches470. One column of cell trenches 450, one column of field plate trenches460 and one contact trench 470 or one pair of contact trenches 470 mayform a pattern which may repeat itself in the first lateral direction aplurality of times. Neighboring patterns may be arranged mirror-invertedwith respect to a longitudinal axis of a shared contact trench 470.Since cell, field plate and contact trenches are defined by the samelithographic mask, many device parameters are not subject to maskalignment tolerances.

The cell trenches 450 may have a width w1 along the second lateraldirection which is smaller than a width w2 of the field plate trenches460 along the second lateral direction. A width w3 of the contacttrenches 470 along the first lateral direction is greater than the widthw1 of the cell trenches 450 and may be the same or may be wider than thewidth w2 of the field plate trenches 460. The pitch of the field platetrenches 460 may be the same or may be greater than a pitch of the celltrenches 450. As shown in the lower half of FIG. 16A, the field platetrenches 460 may have a greater vertical extension with regard to thefirst surface 101 of the semiconductor layer 100 a than the celltrenches 450. The contact trenches 470 may have a greater verticalextension than the cell trenches 450 and the field plate trenches 460.

A highly conformal dielectric layer is provided that completely fillsthe cell trenches 450 but leaves open the contact trenches 470 and thefield plate trenches 460. The conformal dielectric layer may have athickness equal to or greater than half of the width w1 and smaller thanhalf of the width w2. The highly conformal dielectric layer may consistof a single homogenous layer or may include two or more sub-layers ofdifferent dielectric materials, e.g. deposited semiconductor oxide andthermally grown semiconductor oxide. According to an embodiment, theconformal dielectric layer is a TEOS layer having a thickness between 50nm and 200 nm, for example at least 100 nm and at most 150 nm, e.g. 120nm.

A sacrificial material is deposited that fills the remaining voids inthe contact and field plate trenches 460, 470. The sacrificial materialmay be any material against which the materials of the semiconductorlayer 100 a and the conformal dielectric layer can be etched with highselectivity. According to an embodiment, the sacrificial material iscarbon. The sacrificial material may be recessed with the surface of theconformal dielectric layer used as the end point of the recess.Contemporaneously with the carbon recess or subsequent to the carbonrecess the conformal dielectric layer may be thinned to about a half ofthe original thickness or to at most 50 nm.

FIG. 16B shows sacrificial fills 461 of the field plate trenches 460 andthe contact trenches 470 as well as the thinned conformal dielectriclayer 200 b covering the first surface 101.

In the cell trenches 450, portions of the conformal dielectric layerform dielectric stripe structures 200. Other portions of the conformaldielectric layer 200 a line the field plate and contact trenches 460,470. A photolithographic process patterns a first mask layer depositedon the conformal dielectric layer to form a first mask 510 with maskopenings 515.

In FIG. 16C the first mask 510 covers a first area 610 including firststripe sections 261 in first end portions of the dielectric stripestructures 200 as well as first fin sections 181 of the semiconductorfins 180 between the first stripe sections 261. The first area 610further includes the field plate trenches 460 as well as portions of thesemiconductor layer 100 a between the field plate trenches 460, betweenthe field plate trenches 460 and the dielectric stripe structures 200,the contact trenches 470, the area between the contact trenches 470 andthe field plate trenches 460, and the area between the contact trenches470 and the dielectric stripes structures 200. The openings 515 exposecentral second stripe portions 262 between the first and second endportions as well as second fin sections 182 between the second stripesections 262.

P type impurities may be selectively introduced, e.g. implanted, throughthe openings 515 into the second fin portions 182 at differentimplantation energies. The implanted impurities may reduce the netimpurity concentration of the background doping in the semiconductorlayer 100 a to form channel zones for depletion type transistors or maycounter-dope the background doping to form p-type body zones forenhancement type transistors.

The first cross-sectional view in FIG. 16C shows that the resultingchannel/body zones 115 may have a greater vertical extension than thedielectric stripe structures 200.

The first mask 510 may or may not be trimmed to widen the openings 515along the first lateral direction. Then, the trimmed or not trimmedfirst mask 510 may be used as an etch mask to form recess grooves 150 ain the dielectric stripe structures 200 as well as to remove exposedportions of the thinned conformal dielectric layer 200 b on the secondfin portions 182. Remnants of the dielectric stripe structure 200 formfirst cell insulators 202 a in the first end portions, second cellinsulators 202 b below the recess grooves 150 and third cell insulators202 c in the second end portions.

As shown in the second cross-sectional view of FIG. 16C, the etch doesnot attack the semiconductor fins 180 such that the second fins sections182 are exposed on a top side parallel to the first surface 101 andalong upper sections of fin sidewalls oriented to the top surface,wherein the fin sidewalls are tilted, e.g. vertically tilted, to thefirst surface 101.

Remnants of the first mask 510 are removed. The sacrificial fills 461may be removed selectively against the exposed silicon portions and thematerial of the thinned conformal dielectric layer 200 b. For example,the sacrificial material is carbon and the carbon is removed via acarbon ash. A photolithographic process patterns a second mask layerdeposited on the thinned conformal dielectric layer 200 b to form asecond mask 520 with openings 525 exposing the contact trenches 470 andcovering the area between the contact trenches 470. The second mask 520may be provided from amorphous silicon or polycrystalline silicon, byway of example. An etch process uses the second mask 520 as an etch maskand removes remnant portions of the conformal dielectric layer 200 afrom sidewalls of the contact trenches 470 as well as portions of thethinned conformal dielectric layer 200 b on the first surface 101directly adjoining the contact trenches 470.

The cross-sectional views of FIG. 16D show a second mask 520 based on anapproximately conformal mask layer and covering approximately completelythe area between neighboring contact trenches 470. According to anotherembodiment, the second mask 520 may be based on a highly non-conformalmask layer and may have an approximately planar surface.

Remnants of the second mask 520 are removed. A thermal oxidation processof the semiconductor material may form gate dielectrics 205 on the finsidewalls and on the top surface of the second fin portions 182 as wellas on the sidewalls of the contact trenches 470. A conformal conductivelayer 155 may be deposited to fill the recess grooves 150 a in the celltrenches 450 and the voids in the field plate trenches 460. A furtherphotolithographic process may pattern a third mask layer deposited onthe conformal conductive layer 155 to form a third mask 530 for defininggate and field plate connection stripes.

FIG. 16E shows the third mask 530 comprising line portions 530 in thevertical projection of the cell and field plate trenches 450, 460.Outside the cell and field plate trenches 450, 460 the conformalconductive layer 155, which may consist of or contain heavily dopedpolycrystalline silicon, may cover the first surface 101, the thinnedconformal dielectric layer 200 b and may line the contact trenches 410.

As shown in the second cross-sectional view of FIG. 16E, portions of theconformal conductive layer 155 filling the recessed grooves 150 a formburied gate electrodes 150, wherein the gate dielectrics 205dielectrically insulate the buried gate electrodes 150 from thechannel/body zones 115 in the second fin sections 182. The thickness ofthe conformal conductive layer 155 may be in the range from 50 to 200nm, for example between 80 and 120 nm. Portions of the conformalconductive layer 155 filling the voids in the field plate trenches 460form buried field plate electrodes 160.

An isotropic etch may remove exposed portions of the conformalconductive layer 155 above the first surface 101 and in the contacttrenches 410 to form gate and field plate connection stripes 151, 161.

FIG. 16F shows the field plate connection stripes 161 extending alongthe second lateral direction and structurally and electricallyconnecting buried field plate electrodes 160 assigned to the same columnof field plate stripes 360. The gate connection stripes 151 extend alongthe second lateral direction and structurally and electrically connectburied gate electrodes 150 assigned to the same column of cell stripes350.

A dielectric material, for example a silicon oxide, may be deposited ata high deposition rate in a HDP (high deposition rate) process to form anon-conformal dielectric layer 220, wherein the deposition rate outsidethe contact trenches 470 may be higher than within the contact trenches470, for example along the sidewalls of the contact trenches 470, andthe deposition rate at the bottom of the contact trenches 470 may behigher than at the sidewalls.

FIG. 16G shows the deposited non-conformal dielectric layer 220 having afirst thickness y1 outside the contact trenches 470 and a secondthickness y2, which is significantly smaller than the first thicknessy1, at the sidewalls of the contact trenches 470. According to anembodiment, the first thickness y1 is at least 100 nm, for example 150nm, and the second thickness y2 is less than 50 nm, for example 30 nm. Athird thickness y3 at the trench bottom may be greater than the secondthickness y2, for example at least 100 nm.

The non-conformal dielectric layer 220 is isotropically etched with highselectivity against the semiconductor material of the semiconductorlayer 100 a. The etch process is stopped when the non-conformaldielectric layer 220 is completely removed from the sidewalls of thecontact trenches 470 whereby remnants of the non-conformal dielectriclayer 220 are still present outside the contact trenches 470 and at thebottom of the contact trenches 470.

FIG. 16H shows the contact trenches 470 with the sidewalls exposing thesemiconductor material of the semiconductor layer 100 a. First remnants220 a of the non-conformal dielectric layer 220 cover the area betweenneighboring contact trenches 470 and second remnants 220 b the bottom ofthe contact trenches 470. The isotropic etch may be based on an etchantcontaining hydrofluoridic acid HF.

N type impurities may be introduced into regions of the semiconductorlayer 100 a directly adjoining the vertical sidewalls of the contacttrenches 470, for example by way of an implant tilted to the normal tothe first surface 101 and parallel to the first lateral direction.Implant damages may be annealed using an RTP (rapid thermal process).Alternatively or in addition, n type impurities may be introducedthrough the vertical sidewalls of the contact trenches 470 using aplasma diffusion process or out diffusion from a sacrificial layer. Thesecond remnants 220 b shield the bottom of the contact trenches 470against introduction of impurities.

FIG. 16H shows source zones 110 and heavily doped source contact zones111 extending along the vertical sidewalls of the contact trenches 470at the side oriented to cell stripes 350 formed in place of the celltrenches 450. Along the sidewalls oriented to field plate stripes 360formed in place of the field plate trenches 460, drain zones 128 andheavily doped drain contact zones 130 may be formed corresponding indimensions and configuration to the source zones 110 and source contactzones 111.

The thick bottom oxide formed by the second remnants 220 b in thecontact trenches 470 may be removed and p type impurities may beimplanted through the bottom of the contact trenches 470. Implantdamages may be annealed and the semiconductor substrate 500 a may becleaned. A thin metal barrier liner 371 may be deposited that lines thecontact trenches 470. The barrier liner 371 may consist of or containtitanium Ti, titanium nitride TiN, tantalum Ta, or tantalum nitride TaNand may have a thickness of at least 5 nm and at most 100 nm, forexample at least 10 nm and at most 50 nm.

FIG. 16I shows the barrier liner 371 lining the contact trenches 470 andcovering the first remnants 220 a of the non-conformal dielectric layer220 outside the contact trenches 470. A contact fill material, forexample tungsten W, may be deposited and chemically/mechanicallypolished using the second remnants 220 b covering the gate and fieldplate connection stripes 151, 161 as an end point.

FIG. 16J shows the surface of the resulting contact stripes 370 withfill portions 372 of the contact fill material flush with the surface ofthe first remnants 220 a of the non-conformal dielectric layer. Adielectric material consisting of or containing USG (undoped silicateglass), BSG (boron silicate glass), PSG (phosphorous silicate glass) orBPSG (boron phosphorous silicate glass) may be deposited and annealed toform an interlayer dielectric 230.

A further photolithographic process may pattern a further mask layerdeposited on the interlayer dielectric 230 to form a further mask toform, in the interlayer dielectric 230, openings for contact plugs 305to the buried contact structures 370, the gate connection stripes 151and the field plate connection stripes 161 as shown in FIG. 16K. Afurther dielectric structure may be deposited and patterned to providegate and field plate wiring.

FIG. 17 shows an alternative layout with the cell trenches 450structurally connected to the contact trenches 470. The layout of FIG.17 may be subjected to the method as described with reference to FIGS.16A to 16K.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

What is claimed is:
 1. A method of manufacturing a semiconductor device,the method comprising: providing dielectric stripe structures extendingfrom a first surface into a semiconductor substrate betweensemiconductor fins; providing a first mask covering a first areaincluding first stripe and fin sections and exposing a second areaincluding second stripe and fin sections; forming channel/body zones inthe second fin sections by introducing impurities using the first maskas an implant mask; and forming recess grooves in the second stripesections using an etch mask based on the first mask.
 2. The method ofclaim 1, wherein the first mask is used as the etch mask for forming therecess grooves.
 3. The method of claim 1, further comprising: trimmingthe first mask after introducing the impurities and before forming therecess grooves; and using the trimmed first mask as the etch mask forforming the recess grooves.
 4. The method of claim 1, furthercomprising: forming a gate dielectric along sidewalls and top surfacesof the second fin sections after forming the recess grooves in thesecond stripe sections, the top surfaces being parallel to the firstsurface.
 5. The method of claim 4, further comprising: implantingimpurities into sections of the semiconductor substrate exposed by endfaces of the recess grooves, wherein the gate dielectric is formed by athermal growth and a cell insulator contemporaneously formed by thethermal growth at exposed end faces of the recess grooves are formedthicker than the gate dielectrics.
 6. The method of claim 1, furthercomprising: forming buried gate electrodes by filling the recess grooveswith conductive material.
 7. The method of claim 1, further comprising:introducing, by using position information contained in a trench maskdefining the dielectric stripe structures, contact trenches extending ina second lateral direction orthogonal to longitudinal axes of thedielectric stripe structures parallel to the first surface.
 8. Themethod of claim 7, further comprising: introducing, by using positioninformation contained in the first mask, contact trenches extending in asecond lateral direction orthogonal to longitudinal axes of thedielectric stripe structures parallel to the first surface.
 9. Themethod of claim 1, further comprising: forming, using a singlelithographic trench mask, cell trenches, field plate trenches andcontact trenches extending from the first surface into the semiconductorsubstrate; forming the dielectric stripe structures in the cell trenchesand from the dielectric stripe structures cell stripes; and formingfield plate stripes in the field plate trenches and contact stripes inthe contact trenches.
 10. The method of claim 1, further comprising:providing, before providing the first mask, field plate stripesextending from the first surface into the semiconductor substrate in thefirst area, wherein longitudinal axes of the field stripe structures areparallel to longitudinal axes of the dielectric stripe structuresparallel to the first surface.
 11. The method of claim 10, wherein asecond width w2 of the field stripe structures orthogonal to thelongitudinal axes is greater than a first width w1 of the dielectricstripe structures orthogonal to the longitudinal axes.
 12. The method ofclaim 11, further comprising: forming a conformal dielectric layerhaving a thickness greater than half of the first width w1 and smallerthan half of the second width w2.
 13. The method of claim 1, wherein:the first mask covers a third area including third stripe and finsections, the third area spaced from the first area by the second area;and remnants of the dielectric stripe structures in the third area afterforming the recess grooves form third cell insulator structures thickerthan a gate dielectric formed in the fin sections.
 14. The method ofclaim 1, further comprising: providing a source zone directly adjoiningthe channel/body zones in a first lateral direction defined bylongitudinal axes of the dielectric stripe structures parallel to thefirst surface by introducing impurities through sidewalls of contacttrenches formed by using positional information contained in the firstmask or a trench mask for forming the dielectric stripe structures.